AUIRGP4063D-E, AUIRGP4063D Datasheet - International Rectifier

AUIRGP4063D-E INSULATED GATE BIPOLAR TRANSISTOR

AUIRGP4063D-E Features

* Low VCE (ON) Trench IGBT Technology

* Low switching losses

* Maximum Junction temperature 175 °C

* 5 μS short circuit SOA G

* Square RBSOA

* 100% of the parts tested for 4X rated current (ILM)

* Positive VCE (ON) Temperature co-efficient

Datasheet Details

AUIRGP4063D-E, AUIRGP4063D

International Rectifier

332.60 KB

Insulated gate bipolar transistor.

This datasheet PDF includes multiple part numbers: AUIRGP4063D-E, AUIRGP4063D.
Please refer to the document for exact specifications by model.

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