AUIRGP4066D1-E Features
* Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 μS short circuit SOA Square RBSOA 100% of the parts tested for 4X rated current (I LM) Positiv
AUIRGP4066D1-InternationalRectifier.pdf
Datasheet Details
AUIRGP4066D1-E, AUIRGP4066D1
International Rectifier
497.52 KB
Insulated gate bipolar transistor.
This datasheet PDF includes multiple part numbers: AUIRGP4066D1-E, AUIRGP4066D1.
Please refer to the document for exact specifications by model.
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