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FA57SA50LC HEXFET Power MOSFET

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Description

PD - 91650A FA57SA50LC HEXFET® Power MOSFET l l l l l l l l l Fully Isolated Package Easy to Use and Parallel Low On-Resistance Dynamic dv/dt Rating.
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low.

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Features

* ma-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www. irf. com/ Data and specificatio

Applications

* at power dissipation levels to approximately 500 watts. The low thermal resistance of the SOT-227 contribute to its wide acceptance throughout the industry. S O T -2 2 7 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG VISO Continuou

FA57SA50LC Distributors

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FA57SA50LC HEXFET Power MOSFET International Rectifier
International Rectifier FA57SA50LC-like datasheet