IRF130 Datasheet - International Rectifier

IRF130 N-Channel Power MOSFET

HEXFET® MOSFET technology is the key to IR Hirel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high trans conductance; superior reverse energy and diode recovery dv.

IRF130 Features

* Repetitive Avalanche Ratings

* Dynamic dv/dt Rating

* Hermetically Sealed

* Simple Drive Requirements

* ESD Rating: Class 1C per MIL-STD-750, Method 1020 Absolute Maximum Ratings Symbol Parameter ID1 @ VGS = 10V, TC = 25°C Continuous Drain Current ID2 @ VGS = 10V, TC = 100

IRF130 Datasheet (1.07 MB)