IRF1407LPbF, IRF1407SPbF Datasheet - International Rectifier

IRF1407LPbF Power MOSFETs

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the des.

IRF1407LPbF Features

* 1.0E-06 1.0E-05 1.0E-04 tav (sec) 1.0E-03 1.0E-02 Fig 15. Typical Avalanche Current Vs.Pulsewidth 1.0E-01 EAR , Avalanche Energy (mJ) 400 300 200 100 0 25 TOP Single Pulse BOTTOM 10% Duty Cycle ID = 78A 50 75 100 125 150 Starting TJ , Junction Temperature (°C) Notes on Repetitive Ava

IRF1407SPbF-InternationalRectifier.pdf