Description
PD -95486 IRF1407SPbF Benefits O Advanced Process Technology O Ultra Low On-Resistance O Dynamic dv/dt Rating O 175°C Operating Temperature O Fa.
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon.
Features
* 1.0E-06
1.0E-05
1.0E-04 tav (sec)
1.0E-03
1.0E-02
Fig 15. Typical Avalanche Current Vs. Pulsewidth
1.0E-01
EAR , Avalanche Energy (mJ)
400
300
200
100
0 25
TOP
Single Pulse
BOTTOM 10% Duty Cycle
ID = 78A
50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Notes on Repetitive Ava
Applications
* The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for
high current applications because of its low internal connect