IRF1407SPbF Datasheet, Mosfets, International Rectifier

IRF1407SPbF Features

• Mosfets .1 0.10 0.05 0.02 0.01 0.01 0.00001 SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01 t1, Rectangular Pulse Duration (sec) P DM t1 t2 Notes: 1. Duty factor D = t1/ t 2 2. Peak

PDF File Details

Part number:

IRF1407SPbF

Manufacturer:

International Rectifier

File Size:

246.29kb

Download:

📄 Datasheet

Description:

Power mosfets. Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resist

IRF1407SPbF Application

• Applications The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability

TAGS

IRF1407SPbF

International Rectifier

📁 Related Datasheet

IRF1407SPbF - Power MOSFET (Infineon)
IRF1407SPbF IRF1407LPbF Benefits  Advanced Process Technology  Ultra Low On-Resistance  Dynamic dv/dt Rating  175°C Operating Temperature  Fast .

IRF1407S - Power MOSFET (International Rectifier)
PD -94335 Benefits q q q q q q IRF1407S IRF1407L HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 17.

IRF1407S - N-Channel MOSFET (INCHANGE)
Isc N-Channel MOSFET Transistor IRF1407S ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·10.

IRF1407S - Power MOSFET (Infineon)
IRF1407SPbF IRF1407LPbF Benefits  Advanced Process Technology  Ultra Low On-Resistance  Dynamic dv/dt Rating  175°C Operating Temperature  Fast .

IRF1407 - Power MOSFET (International Rectifier)
Typical Applications l Industrial Motor Drive Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Ope.

IRF1407 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IRF1407，IIRF1407 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤7.8mΩ ·Enhancement mode ·Fast Switching Spee.

IRF1407L - Power MOSFET (International Rectifier)
PD -94335 Benefits q q q q q q IRF1407S IRF1407L HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 17.

IRF1407L - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤7.8mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche .

IRF1407L - Power MOSFET (Infineon)
IRF1407SPbF IRF1407LPbF Benefits  Advanced Process Technology  Ultra Low On-Resistance  Dynamic dv/dt Rating  175°C Operating Temperature  Fast .

IRF1407LPbF - Power MOSFET (Infineon)
IRF1407SPbF IRF1407LPbF Benefits  Advanced Process Technology  Ultra Low On-Resistance  Dynamic dv/dt Rating  175°C Operating Temperature  Fast .