IRF1407SPbF Datasheet - International Rectifier

IRF1407SPbF, Power MOSFETs

PD -95486 IRF1407SPbF Benefits O Advanced Process Technology O Ultra Low On-Resistance O Dynamic dv/dt Rating O 175°C Operating Temperature O Fa.
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon.

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IRF1407SPbF-InternationalRectifier.pdf

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Datasheet Details

Part number:

IRF1407SPbF

Manufacturer:

International Rectifier

File Size:

246.29 KB

Description:

Power MOSFETs

Features

* 1.0E-06 1.0E-05 1.0E-04 tav (sec) 1.0E-03 1.0E-02 Fig 15. Typical Avalanche Current Vs. Pulsewidth 1.0E-01 EAR , Avalanche Energy (mJ) 400 300 200 100 0 25 TOP Single Pulse BOTTOM 10% Duty Cycle ID = 78A 50 75 100 125 150 Starting TJ , Junction Temperature (°C) Notes on Repetitive Ava

Applications

* The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connect

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IRF1407SPbF Power MOSFETs International Rectifier

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