IRF3709ZS Datasheet - International Rectifier

IRF3709ZS HEXFET Power MOSFET

Applications l High Frequency Synchronous Buck Converters for Computer Processor Power PD - 95835 IRF3709Z IRF3709ZS IRF3709ZL HEXFET® Power MOSFET VDSS RDS(on) max Qg 30V 6.3m: 17nC Benefits l Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current TO-220AB IRF3709Z D2Pak IRF3709ZS TO-262 IRF3709ZL Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C Gate-to-Source Voltag.

IRF3709ZS Features

* n includes the terms Qgs2 and Qoss which are new to Power MOSFET data sheets. Qgs2 is a sub element of traditional gate-source charge that is included in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub elements, Qgs1 and Qgs2, can be seen from Fig 16. Qgs2 in

IRF3709ZS Datasheet (331.03 KB)