IRF4104GPbF Datasheet - International Rectifier

IRF4104GPbF, Power MOSFET

PD - 96350 .
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

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IRF4104GPbF-InternationalRectifier.pdf

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Datasheet Details

Part number:

IRF4104GPbF

Manufacturer:

International Rectifier

File Size:

268.03 KB

Description:

Power MOSFET

Applications

* G Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package limited) IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation Linear Der

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IRF4104GPbF Power MOSFET International Rectifier

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