Datasheet4U Logo Datasheet4U.com

IRF40B207 - N-Channel MOSFET

IRF40B207 Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF40B207,IIRF40B207 *.

IRF40B207 Features

* Static drain-source on-resistance: RDS(on) ≤4.5mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IRF40B207 Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 40 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 95 IDM Drain Current-Single Pulsed 380 PD Total Dissipation @TC=25℃ 83 Tj Max. Operating Junction Temperature 175 Tstg Storage Tem

📥 Download Datasheet

Preview of IRF40B207 PDF
datasheet Preview Page 2

Datasheet Details

Part number
IRF40B207
Manufacturer
INCHANGE
File Size
241.97 KB
Datasheet
IRF40B207-INCHANGE.pdf
Description
N-Channel MOSFET

📁 Related Datasheet

  • IRF4000 - IEEE 802.3af Compliant PoE Switch (International Rectifier)
  • IRF40N03 - N-CHANNEL Power MOSFET (ETC)
  • IRF40SC240 - MOSFET (Infineon)
  • IRF4104 - Power MOSFET (International Rectifier)
  • IRF4104GPbF - Power MOSFET (International Rectifier)
  • IRF4104L - Power MOSFET (International Rectifier)
  • IRF4104LPbF - Power MOSFET (International Rectifier)
  • IRF4104PbF - Power MOSFET (International Rectifier)

📌 All Tags

INCHANGE IRF40B207-like datasheet

IRF40B207 Stock/Price