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IRF4905S - P-Channel MOSFET

IRF4905S Description

isc P-Channel MOSFET Transistor *.

IRF4905S Features

* Static drain-source on-resistance: RDS(on)≤20mΩ(@VGS= -10V; ID= -42A)
* Advanced trench process technology
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IRF4905S Applications

* Fast switching application.
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -55 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -70 PD Total Dissipation @TC=25℃ 170 Tj Max. Operating Junction Temperature -55~150 Tstg Storage Te

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Datasheet Details

Part number
IRF4905S
Manufacturer
INCHANGE
File Size
248.42 KB
Datasheet
IRF4905S-INCHANGE.pdf
Description
P-Channel MOSFET

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P-Channel MOSFET INCHANGE
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