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IRF40R207 - N-Channel MOSFET

IRF40R207 Description

isc N-Channel MOSFET Transistor IRF40R207, IIRF40R207 *.

IRF40R207 Features

* Static drain-source on-resistance: RDS(on)≤5.1mΩ
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IRF40R207 Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 40 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 90 IDM Drain Current-Single Pulsed 337 PD Total Dissipation @TC=25℃ 83 Tj Max. Operating Junction Temperature 175 Tstg Storage Tem

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Datasheet Details

Part number
IRF40R207
Manufacturer
INCHANGE
File Size
237.95 KB
Datasheet
IRF40R207-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE IRF40R207-like datasheet