IRF40R207 - N-Channel MOSFET
IRF40R207 Features
* Static drain-source on-resistance: RDS(on)≤5.1mΩ
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Synchronous rectifier applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PAR
