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IRF4905L - P-Channel MOSFET

IRF4905L Description

isc P-Channel MOSFET Transistor *.

IRF4905L Features

* Static drain-source on-resistance: RDS(on)≤20mΩ(@VGS= -10V; ID= -38A)
* Advanced trench process technology
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IRF4905L Applications

* Fast switching application.
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous PD Total Dissipation @TC=25℃ Tj Max. Operating Junction Temperature Tstg Storage Temperature
* THERMAL CHARACTERIST

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Datasheet Details

Part number
IRF4905L
Manufacturer
INCHANGE
File Size
224.80 KB
Datasheet
IRF4905L-INCHANGE.pdf
Description
P-Channel MOSFET

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P-Channel MOSFET INCHANGE
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