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IRF4104 - N-Channel MOSFET

IRF4104 Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF4104，IIRF4104 *.

IRF4104 Features

* Static drain-source on-resistance: RDS(on) ≤5.5mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IRF4104 Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 40 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 75 IDM Drain Current-Single Pulsed 470 PD Total Dissipation @TC=25℃ 140 Tj Max. Operating Junction Temperature 175 Tstg Storage Te

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Datasheet Details

Part number
IRF4104
Manufacturer
INCHANGE
File Size
241.05 KB
Datasheet
IRF4104-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE IRF4104-like datasheet