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IRF5851PbF Power MOSFET

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Description

l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Available in Tape & Reel l Low Gate Charge l Lead-Free l Halogen-Free PD-95.
These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silic.

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Features

* n Diode Forward Voltage www. irf. com -ID , Drain Current (A) 100 OPERATION IN THIS AREA LIMITED BY RDS(on) 10 100us 1ms 1 10ms TTJA = = 25 ° C 150 ° C Single Pulse 0.1 0.1 1 10 -VDS , Drain-to-Source Voltage (V) 100 Fig 23. Maximum Safe Operating Area 9 IRF5851PbF P-Channel -ID ,

Applications

* This Dual TSOP-6 package is ideal for applications where printed circuit board space is at a premium and where maximum functionality is required. With two die per package, the IRF5851 can provide the functionality of two SOT-23 packages in a smaller footprint. Its unique thermal design and RDS(on)

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