Datasheet Details
- Part number
- IRF5851PbF
- Manufacturer
- International Rectifier
- File Size
- 247.07 KB
- Datasheet
- IRF5851PbF-InternationalRectifier.pdf
- Description
- Power MOSFET
IRF5851PbF Description
l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Available in Tape & Reel l Low Gate Charge l Lead-Free l Halogen-Free PD-95.
These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silic.
IRF5851PbF Features
* n Diode Forward Voltage
www. irf. com
-ID , Drain Current (A)
100 OPERATION IN THIS AREA LIMITED BY RDS(on)
10 100us
1ms 1
10ms
TTJA
= =
25 ° C 150 ° C
Single Pulse
0.1
0.1
1
10
-VDS , Drain-to-Source Voltage (V)
100
Fig 23. Maximum Safe Operating Area
9
IRF5851PbF
P-Channel
-ID ,
IRF5851PbF Applications
* This Dual TSOP-6 package is ideal for applications where printed circuit board space is at a premium and where maximum functionality is required. With two die per package, the IRF5851 can provide the functionality of two SOT-23 packages in a smaller footprint. Its unique thermal design and RDS(on)
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