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IRF5851PbF

Power MOSFET

IRF5851PbF Features

* n Diode Forward Voltage www.irf.com -ID , Drain Current (A) 100 OPERATION IN THIS AREA LIMITED BY RDS(on) 10 100us 1ms 1 10ms TTJA = = 25 ° C 150 ° C Single Pulse 0.1 0.1 1 10 -VDS , Drain-to-Source Voltage (V) 100 Fig 23. Maximum Safe Operating Area 9 IRF5851PbF P-Channel -ID ,

IRF5851PbF General Description

These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dual TSOP-6 p.

IRF5851PbF Datasheet (247.07 KB)

Preview of IRF5851PbF PDF

Datasheet Details

Part number:

IRF5851PbF

Manufacturer:

International Rectifier

File Size:

247.07 KB

Description:

Power mosfet.
l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Available in Tape & Reel l Low Gate Charge l Lead-Free l Halogen-Free PD-95.

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IRF5851PbF Power MOSFET International Rectifier

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