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IRF510S Power MOSFET

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Description

www.vishay.com IRF510S, SiHF510S Vishay Siliconix Power MOSFET D D2PAK (TO-263) G GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Q.
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

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Features

* Surface-mount
* Available in tape and reel
* Dynamic dv/dt rating
* Repetitive avalanche rated Available
* 175 °C operating temperature
* Fast switching Available
* Ease of paralleling
* Material categorization: for definition

Applications

* because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface-mount application. ORDERING INFORMATION Package Lead (Pb)-free and halogen-free Lead (Pb)-free Note a. See device orientation D2PAK (TO-263) SiHF510S-GE3 IRF510SPbF D2PAK (TO-263) SiHF510STRL-GE3

IRF510S Distributors

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