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IRF530 - Power MOSFET

IRF530 Description

www.vishay.com IRF530 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max.(nC) Qgs .
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

IRF530 Features

* Dynamic dV/dt rating
* Repetitive avalanche rated Available
* 175 °C operating temperature
* Fast switching Available
* Ease of paralleling
* Simple drive requirements Available
* Material categorization: for definitions of compliance

IRF530 Applications

* at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. TO-220AB IRF530PbF IRF530PbF-BE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-sou

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Power MOSFET Vishay
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