IRF6612TR1 - HEXFET Power MOSFET

International Rectifier

IRF6612TR1 Datasheet Preview — Preview of IRF6612TR1 PDF

Datasheet Details

Part number	IRF6612TR1
Manufacturer	International Rectifier ↗
File Size	200.07 KB
Description	HEXFET Power MOSFET
Datasheet	IRF6612TR1_InternationalRectifier.pdf

IRF6612TR1 Product details

Description

The IRF6612 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

Features

ry dv/dt - -.
+ RG.
dv/dt controlled by RG Driver same type as D. U. T. I SD controlled by Duty Factor "D" D. U. T. - Device Under Test V DD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD.
VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 16. Gate Charge Waveform www. irf. com 7 I.

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Published: Apr 16, 2005 |