IRF6612TR1 Datasheet | International Rectifier

Description The IRF6612 bines the latest HEXFET® Power MOSFET Silicon technology with the advanced Direct FET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The Direct FET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The Direct FET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%. The IRF6612 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6612 has been optimized for parameters that are critical in synchronous buck converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity to minimize losses in the synchronous FET socke t. Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C PD @TC = 25°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Max. 30 ±20 136 24 19 190 2.8 1.8 89 0.022 -40 to + 150 Units A g g c W W/°C °C Thermal Resistance Parameter Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Case Junction-to-PCB Mounted RθJA RθJA RθJA RθJC RθJ-PCB fj gj hj ij Typ. - - - 12.5 20 - - - 1.0 Max. - - - - - - 1.4 - - - Units °C/W Notes  through ˆ are on page 10 .irf. 02/02/04...