* of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The 175°C rating for the SO-8 pac
IRF7314QPBF Datasheet (241.18 KB)
IRF7314QPBF
International Rectifier
241.18 KB
Power mosfet.
PD - 96107A
IRF7314QPbF
Benefits
* Advanced Process Technology
* ÿDual P-Channel MOSFET
* ÿUltra Low On-Resistance
* .
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