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IRF7316 HEXFET POWER MOSFET

IRF7316 Description

PD - 9.1505B IRF7316 l l l l l Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated HEXFET® Po.
Top View SO-8 Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted) Symbol VDS VGS ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG Drain-Source Volt.

IRF7316 Applications

* The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package i

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HEXFET POWER MOSFET International Rectifier
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