IRF7316QPBF Power MOSFET

International Rectifier

Description

l Advanced Process Technology l Ultra Low On-Resistance l Dual P- Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperat.
These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low onresistance per silicon area.

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Datasheet Specifications

Part number: IRF7316QPBF
Manufacturer: International Rectifier
File Size: 212.74 KB
Datasheet: IRF7316QPBF-InternationalRectifier.pdf
Description: Power MOSFET

Applications

* The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. PD - 96126A IRF7316QPbF HEXFET® Power MOS

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IRF7316QPBF Power MOSFET International Rectifier

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