* of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 package provid
IRF7404QPBF Datasheet (246.61 KB)
IRF7404QPBF
International Rectifier
246.61 KB
Power mosfet.
END OF LIFE
IRF7404QPbF
HEXFET® Power MOSFET
l Advanced Process Technology l Ultra Low On-Resistance l P Channel MOSFET l Surface Mount l Available .
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