IRF7453 - Power MOSFET
PD- 93899A SMPS MOSFET Applications High frequency DC-DC converters IRF7453 HEXFET® Power MOSFET RDS(on) max 0.23Ω@VGS = 10V ID 2.2A l VDSS 250V Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design (See App.
Note AN1001) l Fully Characterized Avalanche Voltage and Current l S S S G 1 8 A A D D D D 2 7 3 6 4 5 T o p V ie w SO-8 Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C ID
IRF7453 Features
* Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7
