* pacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Starting TJ = 25°C, L = 14mH RG = 25Ω, IAS = 4.4A.
* Pulse width ≤ 400µs; duty cycle ≤ 2%. ISD ≤ 2.2A, di/dt ≤ 210A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C. Data and specifications subject to change withou
IRF7492
International Rectifier
105.49 KB
Hexfet power mosfet.
PD - 94498
IRF7492
HEXFET® Power MOSFET
Applications l High frequency DC-DC converters
VDSS
200V
RDS(on) max 79mΩ@VGS = 10V
ID
3.7A
Benefits l Lo.
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