IRF7492 Datasheet - International Rectifier

IRF7492 HEXFET Power MOSFET

PD - 94498 IRF7492 HEXFET® Power MOSFET Applications l High frequency DC-DC converters VDSS 200V RDS(on) max 79mΩ@VGS = 10V ID 3.7A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current S S S G 1 8 A A D D D D 2 7 3 6 4 5 T o p V ie w SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD.

IRF7492 Features

* pacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Starting TJ = 25°C, L = 14mH RG = 25Ω, IAS = 4.4A.

* Pulse width ≤ 400µs; duty cycle ≤ 2%. ISD ≤ 2.2A, di/dt ≤ 210A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C. Data and specifications subject to change withou

IRF7492_InternationalRectifier.pdf