IRF7493 Datasheet - International Rectifier

IRF7493 - HEXFET Power MOSFET

PD - 94654B IRF7493 HEXFET® Power MOSFET l Applications High frequency DC-DC converters VDSS 80V RDS(on) max 15m:@VGS=10V Qg (typ.) 35nC Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current S S S G 1 8 A A D D D D 2 7 3 6 4 5 Top View SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 70°C IDM .

IRF7493 Features

* 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes: Repetitive rating; pulse width limited by max. junction temperature.

* When mounted on 1 inch s

IRF7493_InternationalRectifier.pdf