* xed capacitance that gives the same charging time ISD ≤ 2.2A, di/dt ≤ 210A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C. as Coss while VDS is rising from 0 to 80% VDSS. Starting TJ = 25°C, L = 14mH RG = 25Ω, IAS = 4.4A.
* Pulse width ≤ 400µs; duty cycle ≤ 2%. Data and specifications subject to change w
IRF7492PBF Datasheet (210.05 KB)
IRF7492PBF
International Rectifier
210.05 KB
Hexfet power mosfet.
PD - 95287A IRF7492PbF HEXFET® Power MOSFET Applications l High frequency DC-DC converters l Lead-Free VDSS 200V RDS(on) max 79mW@VGS = 10V ID 3.7.
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