IRF7492PBF Datasheet - International Rectifier

IRF7492PBF HEXFET Power MOSFET

PD - 95287A IRF7492PbF HEXFET® Power MOSFET Applications l High frequency DC-DC converters l Lead-Free VDSS 200V RDS(on) max 79mW@VGS = 10V ID 3.7A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current S S S G 1 2 3 4 8 7 A A D D D D 6 5 Top View SO-8 www.DataSheet4U.com Absolute Maximum Ratings Parameter VDS VGS ID @ TA .

IRF7492PBF Features

* xed capacitance that gives the same charging time ISD ≤ 2.2A, di/dt ≤ 210A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C. as Coss while VDS is rising from 0 to 80% VDSS. Starting TJ = 25°C, L = 14mH RG = 25Ω, IAS = 4.4A.

* Pulse width ≤ 400µs; duty cycle ≤ 2%. Data and specifications subject to change w

IRF7492PBF Datasheet (210.05 KB)