Datasheet Details
| Part number | IRF7606PBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 180.21 KB |
| Description | Power MOSFET |
| Download | IRF7606PBF Download (PDF) |
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| Part number | IRF7606PBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 180.21 KB |
| Description | Power MOSFET |
| Download | IRF7606PBF Download (PDF) |
|
|
|
S S S G Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
HEXFET® Power MOSFET 1 8 A D 2 7D 3 6D 4 5D Top View VDSS = -30V RDS(on) = 0.09Ω The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline.
PD - 95245 IRF7606PbF l Generation V Technology l Ultra Low On-Resistance l P-Channel MOSFET l Very Small SOIC Package l Low Profile (<1.
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|---|---|
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