Datasheet4U Logo Datasheet4U.com

IRF7606PBF Power MOSFET

IRF7606PBF Description

PD - 95245 IRF7606PbF l Generation V Technology l Ultra Low On-Resistance l P-Channel MOSFET l Very Small SOIC Package l Low Profile (<1.1mm) l Avai.
S S S G Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per sili.

IRF7606PBF Applications

* HEXFET® Power MOSFET 1 8 A D 2 7D 3 6D 4 5D Top View VDSS = -30V RDS(on) = 0.09Ω The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed ci

📥 Download Datasheet

Preview of IRF7606PBF PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • IRF7665S2TR1PbF - DIGITAL AUDIO MOSFET (IRF)
  • IRF7665S2TRPbF - DIGITAL AUDIO MOSFET (IRF)
  • IRF710 - N-Channel Power MOSFET (Intersil Corporation)
  • IRF710A - N-Channel Mosfet Transistor (Inchange Semiconductor)
  • IRF710B - 400V N-Channel MOSFET (Fairchild Semiconductor)
  • IRF710S - Power MOSFET (Vishay)
  • IRF711 - N-Channel Mosfet Transistor (Inchange Semiconductor)
  • IRF712 - N-Channel Mosfet Transistor (Inchange Semiconductor)

📌 All Tags

International Rectifier IRF7606PBF-like datasheet