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IRF7606PBF - Power MOSFET

IRF7606PBF Description

PD - 95245 IRF7606PbF l Generation V Technology l Ultra Low On-Resistance l P-Channel MOSFET l Very Small SOIC Package l Low Profile (<1.1mm) l Avai.
S S S G Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per sili.

IRF7606PBF Applications

* HEXFET® Power MOSFET 1 8 A D 2 7D 3 6D 4 5D Top View VDSS = -30V RDS(on) = 0.09Ω The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed ci

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