IRF8788PBF Datasheet - International Rectifier

IRF8788PBF Power MOSFET

The IRF8788PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8788PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. Th.

www.DataSheet4U.com PD - 97137A IRF8788PbF Applications Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters l HEXFET® Power MOSFET VDSS RDS(on) max Qg 30V 2.8m:@VGS = 10V 44nC A A D D D D Benefits l l l l l l l Very Low Gate Charge Very Low RDS(on) at 4.5V VGS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current 20V VGS Max. Gate Rating 100% tested for Rg Lead-Free S S S G 1 2 3 4 8 7 6 5 Top View SO-8 De.

IRF8788PBF Features

* ons are shown in milimeters (inches) B 5 DIM A A1 b INCH E S MIN .0532 .0040 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MIL L IME T E R S MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 6 E 8 7 6 5 H 0.25 [.010] A c D E e e1 H 1 2 3 4 .050 B AS IC .02

IRF8788PBF Datasheet (263.80 KB)