* Benefits High and low-side MOSFETs in a single package Increased power density High-side P-Channel MOSFET Easier drive circuitry Industry-standard pinout results in Multi-vendor compatibility Compatible with existing surface mount techniques Easier manufacturing RoHS compliant containing no Lead,
IRF9389PBF Datasheet (283.57 KB)
IRF9389PBF
International Rectifier
283.57 KB
Hexfet power mosfet.
IRF9389PbF
N-CH 30 27 6.8 6.8 P-CH -30 64 8.1 -4.6
HEXFET® Power MOSFET
V m nC A
S1 G1 S2 G2
N-CHANNEL MOSFET 1 8 2 7
V DS R DS(on) max Qg (typical.
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