Datasheet4U Logo Datasheet4U.com

IRF9310PBF Power MOSFET

IRF9310PBF Description

VDS RDS(on) max (@VGS = 10V) ID (@TA = 25°C) -30 V 6 4.6 mΩ 6 6 -20 A * Applications * Charge and Discharge Switch for Note.

IRF9310PBF Features

* Features Low RDSon (≤ 4.6mΩ) Industry-Standard SO8 Package RoHS Compliant Containing no Lead, no Bromide and no Halogen Resulting Benefits Lower Conduction Losses results in ⇒ Multi-Vendor Compatibility Environmentally Friendlier Orderable part number IRF9310PbF IRF9310TRPbF Package Type SO8 SO8

📥 Download Datasheet

Preview of IRF9310PBF PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • IRF9358 - Dual P-Channel HEXFET Power MOSFET (Infineon)
  • IRF9358PbF - Dual P-Channel HEXFET Power MOSFET (Infineon)
  • IRF9388PbF - Power MOSFET (Infineon)
  • IRF9130 - P-Channel Power MOSFET (Samsung semiconductor)
  • IRF9130SMD - P-Channel Power MOSFET (Seme LAB)
  • IRF9131 - P-Channel Power MOSFET (Samsung semiconductor)
  • IRF9132 - P-Channel Power MOSFET (Samsung semiconductor)
  • IRF9133 - P-Channel Power MOSFET (Samsung semiconductor)

📌 All Tags

Power MOSFET International Rectifier
International Rectifier IRF9310PBF-like datasheet