* Features 25V VGS max Industry-Standard SO8 Package RoHS Compliant Containing no Lead, no Bromide and no Halogen Resulting Benefits Direct Drive at High VGS Multi-Vendor Compatibility Environmentally Friendlier Orderable part number IRF9392PbF IRF9392TRPbF Package Type SO8 SO8 Standard Pack Form
IRF9392PbF Datasheet (280.32 KB)
IRF9392PbF
International Rectifier
280.32 KB
Hexfet power mosfet.
VDS
VGS max
RDS(on) max
(@VGS = -10V)
ID
(@TA = 25°C)
-30 ±25 17.5
-9.8
V V mΩ
A
PD - 97571
IRF9392PbF
HEXFET® Power MOSFET
6 6 6
*
' '.
📁 Related Datasheet
IRF9392TRPbF - HEXFET Power MOSFET
(International Rectifier)
VDS
VGS max
RDS(on) max
(@VGS = -10V)
ID
(@TA = 25°C)
-30 ±25 17.5
-9.8
V V mΩ
A
PD - 97571
IRF9392PbF
HEXFET® Power MOSFET
6 6 6 *
' ' ' .
IRF9393PbF - HEXFET Power MOSFET
(International Rectifier)
PD - 97522A
IRF9393PbF
HEXFET® Power MOSFET
VDS VGS max RDS(on) max
(@VGS = -10V)
-30 ±25 19.4 -9.2
V V mΩ A
S S S G
1 2 3 4
8 7 6 5
D D D D
.
IRF9395MPBF - HEXFET Power MOSFET
(International Rectifier)
PD - 96332A
DirectFET dual P-Channel Power MOSFET
Typical values (unless otherwise specified)
IRF9395MPbF IRF9395MTRPbF
RDS(on)
Qgs2
3.2nC
VDSS
.
IRF9395MTRPBF - HEXFET Power MOSFET
(International Rectifier)
PD - 96332A
DirectFET dual P-Channel Power MOSFET
Typical values (unless otherwise specified)
IRF9395MPbF IRF9395MTRPbF
RDS(on)
Qgs2
3.2nC
VDSS
.
IRF9310 - Power MOSFET
(International Rectifier)
VDS RDS(on) max
(@VGS = 10V)
ID
(@TA = 25°C)
-30
V
6
4.6
mΩ
6
6
-20
A
*
Applications • Charge and Discharge Switch for Notebook PC Batt.
IRF9310PBF - Power MOSFET
(International Rectifier)
VDS RDS(on) max
(@VGS = 10V)
ID
(@TA = 25°C)
-30
V
6
4.6
mΩ
6
6
-20
A
*
Applications • Charge and Discharge Switch for Notebook PC Batt.
IRF9310PBF-1 - Power MOSFET
(International Rectifier)
VDS RDS(on) max
(@VGS = -10V)
RDS(on) max
(@VGS = -4.5V)
Qg (typical) ID
(@TA = 25°C)
-30 V
4.6 mΩ
6.8
58 nC
-20 A
IRF9310PbF-1
HEXFET® Power MOSFET.
IRF9317 - Power MOSFET
(International Rectifier)
VDS RDS(on) max
(@VGS = -10V)
RDS(on) max
(@VGS = -4.5V)
Qg (typical) ID
(@TA = 25°C)
-30
V
6.6
m:
S1
S2
10.2
m:
S3
G4
31
nC
-16
A
PD -.
