IRF9395MTRPBF - HEXFET Power MOSFET
The IRF9395MTRPbF combines the latest HEXFET® P-Channel Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile.
The DirectFET package is compatible with existing layout ge
IRF9395MTRPBF Features
* l Environmentaly Friendly Product l RoHs Compliant Containing no Lead, Q1-Q2 G G no Bromide and no Halogen l Dual Common-Drain P-Channel MOSFETs Provides High Level of Integration and Very Low RDS(on) Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT D
