* e width limited by max. junction temperature.
* ISD ≤ 26A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS,
* Pulse width ≤ 400µs; duty cycle ≤ 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS TJ ≤ 175°C Starting TJ = 25°C, L = 1
IRFB42N20DPBF Datasheet (168.93 KB)
IRFB42N20DPBF
International Rectifier
168.93 KB
Hexfet power mosfet.
SMPS MOSFET
PD- 95470
IRFB42N20DPbF
HEXFET® Power MOSFET
Applications High frequency DC-DC converters l Motor Control l Uninterrutible Power Supplie.
📁 Related Datasheet
IRFB42N20D Power MOSFET (International Rectifier)
IRFB42N20D N-Channel MOSFET (INCHANGE)
IRFB4212 N-Channel MOSFET (INCHANGE)
IRFB4212PbF Digital Audiio MOSFET (International Rectifier)
IRFB4215 Power MOSFET (International Rectifier)
IRFB4215PbF Power MOSFET (International Rectifier)
IRFB4227 N-Channel MOSFET (INCHANGE)
IRFB4227PBF Power MOSFET (International Rectifier)
IRFB4228 N-Channel MOSFET (INCHANGE)
IRFB4228PBF Power MOSFET (International Rectifier)
