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IRFB4215 - Power MOSFET

IRFB4215 Description

l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated .
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon.

IRFB4215 Features

* 1.32 (.052) 1.22 (.048) LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN 3X 1.40 (.055) 1.15 (.045) 2.54 (.100) 3X 0.93 (.037) 0.69 (.027) 0.36 (.014) M B A M 3X 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROL

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Power MOSFET International Rectifier
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