Datasheet Details
- Part number
- IRFB4215
- Manufacturer
- International Rectifier
- File Size
- 194.12 KB
- Datasheet
- IRFB4215-InternationalRectifier.pdf
- Description
- Power MOSFET
IRFB4215 Description
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated .
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon.
IRFB4215 Features
* 1.32 (.052) 1.22 (.048)
LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN
3X
1.40 (.055) 1.15 (.045)
2.54 (.100)
3X
0.93 (.037) 0.69 (.027)
0.36 (.014) M B A M
3X
0.55 (.022) 0.46 (.018)
2.92 (.115) 2.64 (.104)
2X NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROL
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