IRFBF20L
International Rectifier
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Power mosfet. Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized de
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IRFBF20 - Power MOSFET
(International Rectifier)
.
IRFBF20 - Power MOSFET
(Vishay)
Power MOSFET
IRFBF20, SiHFBF20
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
900 VGS = 10 V
.
IRFBF20L - Power MOSFET
(Vishay)
IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC)
900 VGS = 10 V
38
Qgs (n.
IRFBF20S - Power MOSFET
(International Rectifier)
PD - 9.1665
PRELIMINARY
l l l l l l l
IRFBF20S/L
HEXFET® Power MOSFET
D
Surface Mount (IRFBF20S) Low-profile through-hole (IRFBF20L) Available in T.
IRFBF20S - Power MOSFET
(Vishay)
IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC)
900 VGS = 10 V
38
Qgs (n.
IRFBF30 - Power MOSFET
(International Rectifier)
.
IRFBF30 - Power MOSFET
(Vishay)
.vishay.
IRFBF30
Vishay Siliconix
Power MOSFET
D TO-220AB
S D G
G
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs.
IRFBF30 - N-Channel MOSFET
(INCHANGE)
iscN-Channel MOSFET Transistor
IRFBF30
·FEATURES ·Low drain-source on-resistance:
RDS(ON) =3.7Ω (MAX) ·Enhancement mode:
Vth = 2 to 4V (VDS = 10 V, .
IRFB11N50 - Power MOSFET
(International Rectifier)
PD- 91809B
SMPS MOSFET
IRFB11N50A
HEXFET® Power MOSFET
Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed.
IRFB11N50A - Power MOSFET
(Vishay)
IRFB11N50A, SiHFB11N50A
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
500 VGS = .