IRFH5210PBF - HEXFET Power MOSFET
PD - 97490 www.DataSheet4U.com IRFH5210PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) 100 14.9 39 1.8 55 V mΩ nC Ω A PQFN 5X6 mm Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Benefits Lower Conduction Losses Enables better thermal dissipation Increased Reliability Increased Power Density Multi-Vendor Compatibility Easie
IRFH5210PBF Features
* Features Low RDSon (≤ 14.9mΩ at Vgs = 10V) Low Thermal Resistance to PCB (≤ 1.2°C/W) 100% Rg tested Low Profile (≤ 0.9 mm) results in Industry-Standard Pinout ⇒ Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualificati
