Download Datasheet (498.12 KB)
IRFH7184PBF
International Rectifier
498.12 KB
Power mosfet.
VDSS RDS(on) max (@ VGS = 10V)
Qg (typical) Rg (typical)
ID (@TC (Bottom) = 25°C)
100 4.8 36 1.2
1.
Dimension design to accommodate the component width Dimension design to accommodate the component le.
📁 Related Datasheet
IRFH7184PbF - Power MOSFET
(Infineon)
VDSS RDS(on) max (@ VGS = 10V)
Qg (typical) Rg (typical)
ID (@TC (Bottom) = 25°C)
100 4.8 36 1.2
128
V m nC
A
Applications Optimized for .
IRFH7182PBF - Power MOSFET
(International Rectifier)
VDSS RDS(on) max (@ VGS = 10V)
Qg (typical) Rg (typical)
ID (@TC (Bottom) = 25°C)
100 3.9 49 0.9
157
V m nC
A
Applications Optimized f.
IRFH7185PBF - Power MOSFET
(International Rectifier)
VDSS RDS(on) max (@ VGS = 10V)
Qg (typical) Rg (typical)
ID (@TC (Bottom) = 25°C)
100 5.2 36 1.2
123
V m nC
A
FastIRFET™ IRFH7185PbF
HEXF.
IRFH7187PbF - Power MOSFET
(International Rectifier)
VDSS RDS(on) max (@ VGS = 10V)
Qg (typical) Rg (typical)
ID (@TC (Bottom) = 25°C)
100 6.0 33 0.92
105
V m nC
A
FastIRFET™ IRFH7187PbF
HEX.
IRFH7188PBF - Power MOSFET
(International Rectifier)
VDSS RDS(on) max (@ VGS = 10V)
Qg (typical) Rg (typical)
ID (@TC (Bottom) = 25°C)
100 6.0 33 0.92
105
V m nC
A
FastIRFET™ IRFH7188PbF
HEX.
IRFH7107PBF - HEXFET Power MOSFET
(International Rectifier)
IRFH7107PbF
HEXFET® Power MOSFET
VDS RDS(on) max
(@VGS = 10V)
75 8.5 48 0.6 75
V mΩ nC Ω A
PQFN 5X6 mm
Qg (typical) RG (typical) ID
(@Tc(Bottom) = .
