IRFH8334PBF-1 - Power MOSFET
(International Rectifier)
VDS VGS max RDS(on) max
(@VGS = 10V)
(@VGS = 4.5V)
Qg typ.
ID
(@Tc(Bottom) = 25°C)
30 ± 20
9.0
13.5 7.1
25i
V V
mΩ
nC A
Applications • Control MOSF.
IRFH8330PBF - HEXFET Power MOSFET
(International Rectifier)
IRFH8330PbF
VDS VGS
max
30 ± 20 6.6 9.9 9.3 25
V V mΩ nC A
HEXFET® Power MOSFET
RDS(on) max
(@VGS = 10V) (@VGS = 4.5V)
Qg typ. ID
(@Tc(Bottom) = .
IRFH8330TRPBF - HEXFET Power MOSFET
(International Rectifier)
IRFH8330PbF
VDS VGS
max
30 ± 20 6.6 9.9 9.3 25
V V mΩ nC A
HEXFET® Power MOSFET
RDS(on) max
(@VGS = 10V) (@VGS = 4.5V)
Qg typ. ID
(@Tc(Bottom) = .
IRFH8337 - HEXFET Power MOSFET
(International Rectifier)
VDS VGS max RDS(on) max
(@VGS = 10V) (@VGS = 4.5V)
Qg typ. ID
(@Tc(Bottom) = 25°C)
30
V
± 20 V
12.8 mΩ
19.9
4.7 nC
i 16.2
A
Applications • Con.
IRFH8337PBF - HEXFET Power MOSFET
(International Rectifier)
IRFH8337PbF
HEXFET® Power MOSFET
VDS VGS
max
30 ± 20 12.8 19.9 4.7 16.2
V V mΩ nC A
PQFN 5X6 mm
RDS(on) max
(@VGS = 10V) (@VGS = 4.5V)
Qg typ. ID
.
IRFH8337TRPBF - HEXFET Power MOSFET
(International Rectifier)
IRFH8337PbF
HEXFET® Power MOSFET
VDS VGS
max
30 ± 20 12.8 19.9 4.7 16.2
V V mΩ nC A
PQFN 5X6 mm
RDS(on) max
(@VGS = 10V) (@VGS = 4.5V)
Qg typ. ID
.