* DT/ ZthJC Iav = 2DT/ [1.3
* BV
* Zth] EAS (AR) = PD (ave)
* tav Fig 15. Maximum Avalanche Energy vs. Temperature www.irf.com 5 Free Datasheet http://www.Datasheet4U.com IRFI4410ZGPbF 4.5 VGS(th) Gate threshold Voltage (V) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 -75 -50 -25 0 25 50 75 ID = 1.0A ID
IRFI4410ZGPBF Datasheet (249.15 KB)
IRFI4410ZGPBF
International Rectifier
249.15 KB
Power mosfet.
PD - 96372 IRFI4410ZGPbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High .
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