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IRFNG50 POWER MOSFET N-CHANNEL

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Description

Previous Datasheet www.DataSheet4U.com Index Next Data Sheet Provisional Data Sheet No.PD-9.1556 HEXFET® POWER MOSFET 1000 Volt, 2.0Ω HEXFET HEXFE.

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Datasheet Specifications

Part number
IRFNG50
Manufacturer
International Rectifier
File Size
205.26 KB
Datasheet
IRFNG50_InternationalRectifier.pdf
Description
POWER MOSFET N-CHANNEL

Features

* s s s s s s s Avalanche Energy Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light-weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C I D @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS I AR EAR dv/dt TJ TSTG Contin

Applications

* such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits. The Surface Mount Device (SMD-1) package represents another step in the continual evolution of surface mount technology. The SMD-1 will give designers the extra flexibility they n

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