IRFR5505 Datasheet, Mosfet, International Rectifier

IRFR5505 Features

• Mosfet harge Test Circuit IRFR/U5505 Peak Diode Recovery dv/dt Test Circuit D.U.T
• +
• + Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane

PDF File Details

Part number:

IRFR5505

Manufacturer:

International Rectifier

File Size:

131.43kb

Download:

📄 Datasheet

Description:

Hexfet power mosfet. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance p

IRFR5505 Application

• Applications The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight www.DataSheet4U.com

TAGS

IRFR5505

International Rectifier

📁 Related Datasheet

IRFR5505PBF - Power MOSFET (International Rectifier)
• Lead-Free • Halogen-Free PD - 95077B IRFR5505PbF IRFU5505PbF 1 .irf. © 2012 International Rectifier November 12th , 2012 IRFR/U5505PbF 2 .

IRFR5305 - HEXFET Power MOSFET (International Rectifier)
PD - 91402A IRFR/U5305 HEXFET® Power MOSFET l l l l l l Ultra Low On-Resistance Surface Mount (IRFR5305) Straight Lead (IRFU5305) Advanced Process T.

IRFR5305 - P-Channel MOSFET (INCHANGE)
isc P-Channel MOSFET Transistor IRFR5305 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤65mΩ(@VGS= -10V; ID= -16A) ·Advanced trench process t.

IRFR5305PBF - Power MOSFET (International Rectifier)
.. PD-95025A IRFR5305PbF IRFU5305PbF l l l l l l l Ultra Low On-Resistance Surface Mount (IRFR5305) Straight Lead (IRFU5305) Advan.

IRFR540Z - HEXFET Power MOSFET (International Rectifier)
APPROVED PD - TBD AUTOMOTIVE MOSFET Features lAdvanced Process Technology lUltra Low On-Resistance l175°C Operating Temperature lFast Switching lRe.

IRFR540Z - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IRFR540Z, IIRFR540Z ·FEATURES ·Static drain-source on-resistance: RDS(on)≤28.5mΩ ·Enhancement mode: ·100% avalanche .

IRFR540ZPbF - HEXFET Power MOSFET (International Rectifier)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to T.

IRFR5410 - HEXFET Power MOSFET (International Rectifier)
PD - 9.1533A l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount (IRFR5410) Straight Lead (IRFU5410) Advanced Process Technology Fast Swit.

IRFR5410 - N-Channel MOSFET (INCHANGE)
isc P-Channel MOSFET Transistor IRFR5410,IIRFR5410 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤205mΩ ·Enhancement mode: ·100% avalanche te.

IRFR5410PBF - HEXFET Power MOSFET (International Rectifier)
PD -95314A l l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount (IRFR5410) Straight Lead (IRFU5410) Advanced Process Technology Fast Swit.