IRFR540ZPbF Datasheet - International Rectifier

IRFR540ZPbF, HEXFET Power MOSFET

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This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

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IRFR540ZPbF-InternationalRectifier.pdf

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Datasheet Details

Part number:

IRFR540ZPbF

Manufacturer:

International Rectifier

File Size:

350.61 KB

Description:

HEXFET Power MOSFET

Applications

* G Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage dEAS (Ther

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IRFR540ZPbF HEXFET Power MOSFET International Rectifier

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