IRFR5305PBF Datasheet, Mosfet, International Rectifier

IRFR5305PBF Features

  • Mosfet 25V 25 50 75 100 125 150 A 175 Starting TJ , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current 50KΩ 12V .2µF .3µF D.U.T. +VDS -3mA IG ID Current Sa

PDF File Details

Part number:

IRFR5305PBF

Manufacturer:

International Rectifier

File Size:

274.88kb

Download:

📄 Datasheet

Description:

Power mosfet. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance p

Datasheet Preview: IRFR5305PBF 📥 Download PDF (274.88kb)
Page 2 of IRFR5305PBF Page 3 of IRFR5305PBF

IRFR5305PBF Application

  • Applications The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU

TAGS

IRFR5305PBF
Power
MOSFET
International Rectifier

📁 Related Datasheet

IRFR5305 - HEXFET Power MOSFET (International Rectifier)
PD - 91402A IRFR/U5305 HEXFET® Power MOSFET l l l l l l Ultra Low On-Resistance Surface Mount (IRFR5305) Straight Lead (IRFU5305) Advanced Process T.

IRFR5305 - P-Channel MOSFET (INCHANGE)
isc P-Channel MOSFET Transistor IRFR5305 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤65mΩ(@VGS= -10V; ID= -16A) ·Advanced trench process t.

IRFR540Z - HEXFET Power MOSFET (International Rectifier)
APPROVED PD - TBD AUTOMOTIVE MOSFET Features lAdvanced Process Technology lUltra Low On-Resistance l175°C Operating Temperature lFast Switching lRe.

IRFR540Z - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IRFR540Z, IIRFR540Z ·FEATURES ·Static drain-source on-resistance: RDS(on)≤28.5mΩ ·Enhancement mode: ·100% avalanche .

IRFR540ZPbF - HEXFET Power MOSFET (International Rectifier)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to T.

IRFR5410 - HEXFET Power MOSFET (International Rectifier)
PD - 9.1533A l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount (IRFR5410) Straight Lead (IRFU5410) Advanced Process Technology Fast Swit.

IRFR5410 - N-Channel MOSFET (INCHANGE)
isc P-Channel MOSFET Transistor IRFR5410,IIRFR5410 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤205mΩ ·Enhancement mode: ·100% avalanche te.

IRFR5410PBF - HEXFET Power MOSFET (International Rectifier)
PD -95314A l l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount (IRFR5410) Straight Lead (IRFU5410) Advanced Process Technology Fast Swit.

IRFR5505 - HEXFET Power MOSFET (International Rectifier)
PD - 9.1610B IRFR/U5505 HEXFET® Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount (IRFR5505) Straight Lead (IRFU5505) Advan.

IRFR5505PBF - Power MOSFET (International Rectifier)
• Lead-Free • Halogen-Free PD - 95077B IRFR5505PbF IRFU5505PbF 1 .irf. © 2012 International Rectifier November 12th , 2012 IRFR/U5505PbF 2 .

Stock and price

Infineon Technologies AG
MOSFET P-CH 55V 31A DPAK
DigiKey
IRFR5305PBF
0 In Stock
0
Unit Price : $0
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts