* voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav
* f ZthJC(D, tav) =
IRFS3507 Datasheet (439.39 KB)
IRFS3507
International Rectifier
439.39 KB
(irfx3507) hexfet power mosfet.
www.DataSheet4U.com PD - 96903A IRFB3507 IRFS3507 IRFSL3507 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power.
📁 Related Datasheet
IRFS350 Power MOSFET (Fairchild Semiconductor)
IRFS3507 Power MOSFET (IRF)
IRFS350A N-Channel MOSFET Transistor (Inchange Semiconductor)
IRFS350A Power MOSFET (Fairchild Semiconductor)
IRFS350A Advanced Power MOSFET (IRF)
IRFS3004 N-Channel MOSFET (INCHANGE)
IRFS3004-7PPbF Power MOSFET (International Rectifier)
IRFS3004PBF Power MOSFET (International Rectifier)
IRFS3006 N-Channel MOSFET (INCHANGE)
IRFS3006-7PPbF Power MOSFET (International Rectifier)
