* d breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav
* f Zth
IRFS4610PBF Datasheet (419.77 KB)
IRFS4610PBF
International Rectifier
419.77 KB
Hexfet power mosfet.
PD - 95936B IRFB4610PbF IRFS4610PbF IRFSL4610PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hi.
📁 Related Datasheet
IRFS4610 Power MOSFET (IRF)
IRFS4610 N-Channel MOSFET (INCHANGE)
IRFS4615 TO-263 N-Channel MOSFET (INCHANGE)
IRFS4615 TO-262 N-Channel MOSFET (INCHANGE)
IRFS4615PBF N-Channel HEXFET Power MOSFET (International Rectifier)
IRFS460 Power MOSFET (Fairchild Semiconductor)
IRFS4620 N-Channel MOSFET (INCHANGE)
IRFS4620PBF N-Channel HEXFET Power MOSFET (International Rectifier)
IRFS4010 N-Channel MOSFET (INCHANGE)
IRFS4010-7PPbF Power MOSFET (International Rectifier)
