PD -96202 IRFS4615PbF IRFSL4615PbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free D G S VDSS RDS(on) typ.
max.
ID D 150V 34.5m: 42m: 33A D S G G D S D2Pak IRFS4615PbF TO
IRFS4615PBF Features
* wed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanc
IRFS4615PBF_InternationalRectifier.pdf
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IRFS4615PBF
International Rectifier
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N-channel hexfet power mosfet.
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