IRFZ24S Datasheet - International Rectifier

HEXFET Power MOSFET

IRFZ24S General Description

Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer .

IRFZ24S Datasheet (490.20 KB)

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IRFZ24S

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International Rectifier

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490.20 KB

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Hexfet power mosfet.
www.DataSheet4U.com PD - 9.891A IRFZ24S/L HEXFET® Power MOSFET l l l l l Advanced Process Technology Surface Mount (IRFZ24S) Low-profile through-ho.

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IRFZ24S HEXFET Power MOSFET International Rectifier

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IRFZ24S General Description

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