IRFZ34VPBF HEXFET Power MOSFET

International Rectifier

Description

l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche R.
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon.

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Datasheet Specifications

Part number: IRFZ34VPBF
Manufacturer: International Rectifier
File Size: 223.31 KB
Datasheet: IRFZ34VPBF_InternationalRectifier.pdf
Description: HEXFET Power MOSFET

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IRFZ34VPBF HEXFET Power MOSFET International Rectifier

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