Description
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HEXFET Power MOSFET
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IRFZ34VSPbF IRFZ34VLPbF ®
VDSS = 60V RDS(on) = 28mΩ
G S
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.ID = 30A
The D2Pa
Features
- tion indicates "Lead-F ree" INT E RNAT IONAL RECT IF IE R LOGO ASS E MBLY LOT CODE PART NUMB ER F 530S DAT E CODE YEAR 0 = 2000 WE EK 02 LINE L
OR
INTE RNAT IONAL RECT IFIE R LOGO AS S EMBLY LOT CODE PART NUMBE R F530S DAT E CODE P = DES IGNATE S LEAD-F REE.
