IRFZ46S

Power MOSFET

International Rectifier

IRFZ46S General Description

Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer .

IRFZ46S Datasheet (353.62 KB)

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IRFZ46S

Manufacturer:

International Rectifier

File Size:

353.62 KB

Description:

Power mosfet.
l Advanced Process Technology l Surface Mount (IRFZ46S) l Low-profile through-hole (IRFZ46L) l 175°C Operating Temperature l Fast Switching G Descri.

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IRFZ46S Power MOSFET International Rectifier

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IRFZ46S General Description

Datasheet Details

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