Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area.
Features
- D D IR E C T IO N 1 .8 5 (.0 7 3 )
1 .6 5 (.0 6 5 )
1 1 .6 0 (.4 5 7 ) 1 1 .4 0 (.4 4 9 )
1 5 .4 2 (.6 0 9 ) 1 5 .2 2 (.6 0 1 )
2 4 .3 0 (.9 5 7 ) 2 3 .9 0 (.9 4 1 )
TR L
1 0 .9 0 (.4 2 9 ) 1 0 .7 0 (.4 2 1 ) 1 .7 5 (.0 6 9 ) 1 .2 5 (.0 4 9 ) 1 6 .1 0 (.6 3 4 ) 1 5 .9 0 (.6 2 6 ) 4 .7 2 (.1 3 6 ) 4 .5 2 (.1 7 8 )
F E E D D IR E C T IO N
13.50 (.5 32) 12.80 (.5 04)
27.40 (1.079 ) 23.90 (.9 41) 4
3 3 0.0 0 (14 .1 73 ) MAX. 6 0.00 (2 .36 2) M IN . NOTES : 1 . C O M F O R M S T O E IA -4.